A major downside of scaling nanoelectronics features is the increasing dependence of performance and power on uncontrollable variations in the manufacturing process. EU-funded researchers have implemented an innovative solution to tackle this.
To ensure reliable manufacturability of complementary metal-oxide semiconductor circuitry, researchers proposed to link existing design methods with computer-assisted design. Statistical modelling to assess the impact of inevitable process variations and doping fluctuations promise significant improvements in nano-electronics quality and production efficiency.
Further details: Fault-free designs for nano-scale circuits