Understanding resistance drift in amorphous semiconductors

By working out experimentally, and with computer models, why phase change memory devices suffer from resistance drift, researchers with the EU-funded DIASPORA project are laying the groundwork for a whole new generation of hyperdense non-volatile DRAM chips.

Memory chips in common devices like computers, smartphones and USB drives usually save one bit of digital information in each of the chip's tiny memory cells. To do this, a bit, which can either have a binary value of 0 or 1, is stored as a voltage across a capacitor.

Further details: Understanding resistance drift in amorphous semiconductors